|
Specification |
GAV40
Min. Typ.
Max. |
GAV100
Min. Typ.
Max. |
GAV300
Min. Typ.
Max. |
Units |
| Quantum Effciency |
60 70 |
60 70 |
60 70 |
% |
| Responstivity @1300nm |
.76 .84 |
.76 .84 |
.76 .84 |
A/W
M=1 |
Breakdown Voltage
(IR=µA) |
20  30 40 |
20 30 40 |
20 30 40 |
V |
| Dark Current @ 0.9V |
0.2 |
0.5 1.0 |
1.5 3.0 |
µA |
Capacitance @20V
(f=1MHz) |
0.9 |
1.6 1.8 |
7.0 9.0 |
pF |
| Multiplied Dark Current |
15 |
100 |
300 |
nA |
| Cutoff Frquency (-3db) |
2.0 2.5 |
0.6 0.9 |
0.5 0.8 |
GHz |
| Active Diameter |
40 |
100 |
300 |
µm |
| Reverse Current |
0.3 |
1.0 |
3.0 |
mA |
| Foward Current |
60 |
100 |
100 |
mA |
| Operating Temp |
-10 60 |
-10 60 |
-10 60 |
°C |
| Storage Temp. |
-40 85 |
-40 85 |
-40 85 |
°C |
| Excess Noise Figure |
0.95 All sizes BW = 1MHz M=101 ph=2µA |
| Excess Noise Factor |
9 (All Sizes) @ 1300nm, f=300MHz |
| Case Styles |
TO-46(Modified), TO-46,MM/SM Pigtails, active mounts and ceramic substrates |
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